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FORMATION OF HOMOJUNCTION IN KESTERITE-BASED SEMICONDUCTORS

United States Patent Application

20170018666
A1
View the Complete Application at the US Patent & Trademark Office
Kesterite-based homojunction photovoltaic devices are provided. The photovoltaic devices include a p-type semiconductor layer including a copper-zinc-tin containing chalcogenide compound and an n-type semiconductor layer including a silver-zinc-tin containing chalcogenide compound having a crystalline structure the same as a crystalline structure the copper-zinc-tin containing chalcogenide compound.
Gershon, Talia S. (White Plains, NY), Gunawan, Oki (Westwood, NJ), Haight, Richard A. (Mahopac, NY), Kim, Jeehwan (Los Angeles, CA)
14/ 799,089
July 14, 2015
STATEMENT OF GOVERNMENT RIGHTS [0001] This invention was made with Government support under Contract No.: DE-EE0006334 awarded by Department of Energy. The Government has certain rights in this invention.