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Method of transferring a thin crystalline semiconductor layer

United States Patent Application

20060234474
A1
View the Complete Application at the US Patent & Trademark Office
Los Alamos National Laboratory - Visit the Technology Transfer Division Website
A method for transferring a monocrystalline, thin layer from a first substrate onto a second substrate involves epitaxial growth of a sandwich structure with a strained epitaxial layer buried below a monocrystalline thin layer, and lift-off and transfer of the monocrystalline thin layer with the cleaving controlled to happen within the buried strained layer in conjunction with the introduction of hydrogen.
Nastasi, Michael A. (Santa Fe, NM), Shao, Lin (Los Alamos, NM), Thompson, Phillip E. (Springfield, VA), Lau, Silvanus S. (San Diego, CA), Alford, Terry L. (Phoenix, AZ), Mayer, James W. (Phoenix, AZ), Theodore, N. David (Mesa, AZ)
The Regents of the University of California
11/ 106,849
April 15, 2005
STATEMENT REGARDING FEDERAL RIGHTS [0001] This invention was made with government support under Contract No. W-7405-ENG-36 awarded by the U.S. Department of Energy. The government has certain rights in the invention.