A method for transferring a monocrystalline, thin layer from a first substrate onto a second substrate involves epitaxial growth of a sandwich structure with a strained epitaxial layer buried below a monocrystalline thin layer, and lift-off and transfer of the monocrystalline thin layer with the cleaving controlled to happen within the buried strained layer in conjunction with the introduction of hydrogen.
STATEMENT REGARDING FEDERAL RIGHTS
 This invention was made with government support under Contract No. W-7405-ENG-36 awarded by the U.S. Department of Energy. The government has certain rights in the invention.