Skip to Content
Find More Like This
Return to Search

Method for repairing mask-blank defects using repair-zone compensation

United States Patent Application

20060234135
A1
View the Complete Application at the US Patent & Trademark Office
Lawrence Livermore National Laboratory - Visit the Industrial Partnerships Office Website
A method for repairing mask-blank defects uses repair-zone compensation. Local disturbances are compensated over the post-defect-repair repair-zone by altering a portion of the absorber pattern on the surface of the mask blank. This enables the fabrication of defect-free (since repaired) X-ray Mo--Si multilayer mirrors. Repairing Mo--Si multilayer-film defects on mask blanks is a key for the commercial success of EUVL. It is known that particles are added to the Mo--Si multilayer film during the fabrication process. There is a large effort to reduce this contamination, but results are not sufficient, and defects continue to be a major mask yield limiter.
Hau-Riege, Stefan P. (Fremont, CA), Sweeney, Donald W. (San Ramon, CA), Barty, Anton (Livermore, CA), Mirkarimi, Paul B. (Sunol, CA), Stearns, Daniel G. (Los Altos Hills, CA)
The Regents of the University of CA
11/ 109,026
April 18, 2005
[0001] The United States Government has rights in this invention pursuant to Contract No. W-7405-ENG-48 between the United States Department of Energy and the University of California for the operation of Lawrence Livermore National Laboratory.