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SKYRMION BASED UNIVERSAL MEMORY OPERATED BY ELECTRIC CURRENT

United States Patent Application

*** PATENT GRANTED ***
20170018297
9,773,540
A1
View the Complete Application at the US Patent & Trademark Office
A method for generating a skyrmion, comprising: depositing a vertical metallic nanopillar electrode on a first side of a helimagnetic thin film, the helimagnetic thin film having a contact on a second side to provide a current drain; injecting a current through the vertical metallic nanopillar electrode to generate a rotating field; and applying a static upward magnetic field perpendicular to the helimagnetic thin film to maintain an FM phase background.
ZANG, Jiadong (New Market, NH), CHIEN, Chia-Ling (Cockeysville, MD), LI, Yufan (Baltimore, MD), LAKE, Roger K. (Riverside, CA), YIN, Gen (Riverside, CA)
15/ 213,019
July 18, 2016
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH [0002] This invention was made with government support under Grant Nos. 1128304 awarded by the National Science Foundation, and DEFG02-08ER46544 awarded by the Department of Energy. The government has certain rights in the invention.