Skip to Content
Find More Like This
Return to Search

SELECTIVE LASER ABLATION IN RESISTS AND BLOCK COPOLYMERS FOR HIGH RESOLUTION LITHOGRAPHIC PATTERNING

United States Patent Application

20160377981
A1
View the Complete Application at the US Patent & Trademark Office
Lawrence Berkeley National Laboratory - Visit the Technology Transfer and Intellectual Property Management Department Website
Various embodiments of the invention demonstrate selective laser ablation processes as a means to create a block copolymer derived lithographic pattern through the selective removal of one block. Three block copolymer systems described PS-b-PHOST, P2VP-b-PS-b-P2VP, and P2VP-b-PS-b-P2VP where the P2VP is infiltrated with platinum Pt. The selective laser ablation processes on block copolymers offers an alternative to plasma etching when plasma etching is not effective.
Olynick, Deirdre L. (El Cerrito, CA), Schwartzberg, Adam (Walnut Creek, CA)
The Regents of the University of California (Oakland CA)
15/ 160,097
May 20, 2016
STATEMENT OF GOVERNMENTAL SUPPORT [0002] The invention described and claimed herein was made in part utilizing funds supplied by the U.S. Department of Energy under Contract No. DE-ACO2-05CH11231 between the U.S. Department of Energy and the Regents of the University of California for the management and operation of the Lawrence Berkeley National Laboratory. The government has certain rights in this invention.