Skip to Content
Find More Like This
Return to Search

Semiconductor nano/microlaser tuning by strain engineering

United States Patent Application

20160365705
A1
View the Complete Application at the US Patent & Trademark Office
Sandia National Laboratories - Visit the Intellectual Property Management and Licensing Website
A method for tuning the lasing wavelength of a semiconductor nano/microlaser uses mechanical strain to change the bandgap of the semiconductor material and the lasing wavelength. The method enables broad, dynamic, and reversible spectral tuning of single nano/microlasers with subnanometer resolution.
Wang, George T. (Albuquerque, NM), Liu, Sheng (Albuquerque, NM)
14/ 737,222
June 11, 2015
STATEMENT OF GOVERNMENT INTEREST [0001] This invention was made with Government support under contract no. DE-AC04-94AL85000 awarded by the U. S. Department of Energy to Sandia Corporation. The Government has certain rights in the invention.