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METHODS OF FORMING CIGS FILMS

United States Patent Application

20160365471
A1
View the Complete Application at the US Patent & Trademark Office
National Renewable Energy Laboratory - Visit the NREL Technology Transfer Website
Methods for forming CIGS films are provided. According to an aspect of the invention, a method of forming a CIGS film includes a precursor step, which includes simultaneously evaporating Cu, In, Ga, Se, and Sb onto a substrate. The Se is incident on the substrate at a rate of at least 20 .ANG./s. The method also includes a selenization step, which includes evaporating Se over the substrate after the precursor step.
MANSFIELD, Lorelle (Northglenn, CO), RAMANATHAN, Kannan (San Jose, CA)
15/ 170,480
June 1, 2016
CONTRACTUAL ORIGIN [0002] The United States Government has rights in this invention under Contract No. DEAC36-08GO28308 between the United States Department of Energy and the Alliance for Sustainable Energy, LLC, the Manager and Operator of the National Renewable Energy Laboratory.