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Modification of Electrical Properties of Topological Insulators

United States Patent Application

*** PATENT GRANTED ***
20160365255
9,748,345
A1
View the Complete Application at the US Patent & Trademark Office
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Ion implantation or deposition can be used to modify the bulk electrical properties of topological insulators. More particularly, ion implantation or deposition can be used to compensate for the non-zero bulk conductivity due to extrinsic charge carriers. The direct implantation of deposition/annealing of dopants allows better control over carrier concentrations for the purposes of achieving low bulk conductivity. Ion implantation or deposition enables the fabrication of inhomogeneously doped structures, enabling new types of device designs.
Sharma, Peter Anand (Albuquerque, NM)
15/ 177,215
June 8, 2016
STATEMENT OF GOVERNMENT INTEREST [0002] This invention was made with Government support under contract no. DE-AC04-94AL85000 awarded by the U.S. Department of Energy to Sandia Corporation. The Government has certain rights in the invention.