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NANOSTRUCTURED SILICON WITH USEFUL THERMOELECTRIC PROPERTIES

United States Patent Application

20160359096
A1
View the Complete Application at the US Patent & Trademark Office
Lawrence Berkeley National Laboratory - Visit the Technology Transfer and Intellectual Property Management Department Website
The invention provides for a nanostructured silicon or holey silicon (HS) that has useful thermoelectric properties. The invention also provides for a device comprising the nanostructured silicon or HS. The HS can be placed between two electrodes and used for thermoelectric power generation or thermoelectric cooling.
Yang, Peidong (Kensington, CA), Tang, Jinyao (Milbrae, CA), Wang, Hung-Ta (Tuscaloosa, AL), Russell, Thomas P. (Amherst, MA), Lee, Dong-Hyun (Amherst, MA)
15/ 176,087
June 7, 2016
STATEMENT OF GOVERNMENTAL SUPPORT [0002] The invention described and claimed herein was made in part utilizing funds supplied by the U.S. Department of Energy under Contract Nos. DE-AC02-05CH11231 and DE-FG02-96ER45612, and by the National Science Foundation under Grant No. DMR-0820506. The government has certain rights in this invention.