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DRY ETCH METHOD FOR TEXTURING SILICON AND DEVICE

United States Patent Application

20160351733
A1
View the Complete Application at the US Patent & Trademark Office
A method for texturing silicon includes loading a silicon wafer into a vacuum chamber, heating the silicon wafer and thermal cracking a gas to generate cracked sulfur species. The silicon wafer is exposed to the cracked sulfur species for a time duration in accordance with a texture characteristic needed for a surface of the silicon wafer.
Gershon, Talia S. (White Plains, NY), Haight, Richard A. (Mahopac, NY), Kim, Jeehwan (Los Angeles, CA), Lee, Yun Seog (White Plains, NY)
14/ 727,450
June 1, 2015
GOVERNMENT RIGHTS [0001] This invention was made with Government support under CONTRACT NUMBER: DE-EE0006334 awarded by Department of Energy. The Government has certain rights in this invention.