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HEXAGONAL PHASE EPITAXIAL CADMIUM SULFIDE ON COPPER INDIUM GALLIUM SELENIDE FOR A PHOTOVOLTAIC JUNCTION

United States Patent Application

20160336475
A1
View the Complete Application at the US Patent & Trademark Office
A method of manufacturing a photovoltaic structure includes forming a p-type semiconductor absorber layer containing a copper indium gallium selenide based material over a first electrode, forming a n-type cadmium sulfide layer over the p-type semiconductor absorber layer by sputtering in an ambient including hydrogen gas and oxygen gas, and forming a second electrode over the cadmium sulfide layer.
Mackie, Neil (Fremont, CA), Zapalac, Geordie (San Francisco, CA), Zhang, Weijie (San Jose, CA), Corson, John F. (Mountain View, CA), He, Xiaoqing (Champaign, IL), Rockett, Angus (Champaign, IL), Varley, Joel (San Francisco, CA), Lordi, Vincenzo (San Francisco, CA)
15/ 153,478
May 12, 2016
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT [0001] This invention was made with government support under grant number CPS 25853 awarded by the Department of Energy through the DOE/EERE SunShot BRIDGE program. The government has certain rights in the invention.