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ELIMINATING EMISSIVE SUB-BANDGAP STATES IN NANOCRYSTALS

United States Patent Application

20160336477
A1
View the Complete Application at the US Patent & Trademark Office
The size-dependent band-gap tunability and solution processability of nanocrystals (NCs) make them attractive candidates for optoelectronic applications. One factor that presently limits the device performance of NC thin films is sub-bandgap states, also referred to as trap states. Trap states can be controlled by surface treatment of the nanocrystals.
Hwang, Gyuweon (Cambridge, MA), Kim, Donghun (Cambridge, MA), Cordero, Jose M. (Cambridge, MA), Wilson, Mark W. B. (Somerville, MA), Chuang, Chia-Hao M. (Cambridge, MA), Grossman, Jeffrey C. (Brookline, MA), Bawendi, Moungi G. (Cambridge, MA)
MASSACHUSETTS INSTITUTE OF TECHNOLOGY (Cambridge MA)
15/ 095,001
April 8, 2016
FEDERAL SPONSORSHIP STATEMENT [0002] This invention was made with government support under Contract No. W911 NF-13-D-0001 awarded the Army Research Office and under Grant No. DE-SCOOO1088 awarded by the U.S. Department of Energy. The government has certain rights in the invention.