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FABRICATION OF THIN-FILM ELECTRONIC DEVICES WITH NON-DESTRUCTIVE WAFER REUSE

United States Patent Application

20160307924
A1
View the Complete Application at the US Patent & Trademark Office
Thin-film electronic devices such as LED devices and field effect transistor devices are fabricated using a non-destructive epitaxial lift-off technique that allows indefinite reuse of a growth substrate. The method includes providing an epitaxial protective layer on the growth substrate and a sacrificial release layer between the protective layer and an active device layer. After the device layer is released from the growth substrate, the protective layer is selectively etched to provide a newly exposed surface suitable for epitaxial growth of another device layer. The entire thickness of the growth substrate is preserved, enabling continued reuse. Inorganic thin-film device layers can be transferred to a flexible secondary substrate, enabling formation of curved inorganic optoelectronic devices.
FORREST, Stephen R. (Ann Arbor, MI), LEE, Kyusang (Ann Arbor, MI)
15/ 101,287
December 2, 2014
STATEMENT REGARDING FEDERALLY FUNDED RESEARCH [0001] This invention was made with government support under DE-SC0001013 awarded by the Department of Energy. The Government has certain rights in the invention.