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HIGH RESISTIVITY IRON-BASED, THERMALLY STABLE MAGNETIC MATERIAL FOR ON-CHIP INTEGRATED INDUCTORS

United States Patent Application

20160284786
A1
View the Complete Application at the US Patent & Trademark Office
An on-chip magnetic structure includes a palladium activated seed layer and a substantially amorphous magnetic material disposed onto the palladium activated seed layer. The substantially amorphous magnetic material includes nickel in a range from about 50 to about 80 atomic % (at. %) based on the total number of atoms of the magnetic material, iron in a range from about 10 to about 50 at. % based on the total number of atoms of the magnetic material, and phosphorous in a range from about 0.1 to about 30 at. % based on the total number of atoms of the magnetic material. The magnetic material can include boron in a range from about 0.1 to about 5 at. % based on the total number of atoms of the magnetic material.
Deligianni, Hariklia (Alpine, NY), Gallagher, William J. (Ardsley, NY), Mason, Maurice (Danbury, CT), O'Sullivan, Eugene J. (Nyack, NY), Romankiw, Lubomyr T. (Briancliff Manor, NY), Wang, Naigang (Ossining, NY)
14/ 666,612
March 24, 2015
STATEMENT OF GOVERNMENT INTEREST [0001] This invention was made with Government support under Contract No.: University of California Subcontract No. B601996, awarded by Department of Energy. The Government has certain rights in this invention.