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FABRICATION OF STABLE ELECTRODE/DIFFUSION BARRIER LAYERS FOR THERMOELECTRIC FILLED SKUTTERUDITE DEVICES

United States Patent Application

20160204326
A1
View the Complete Application at the US Patent & Trademark Office
Disclosed are methods for the manufacture of n-type and p-type filled skutterudite thermoelectric legs of an electrical contact. A first material of CoSi.sub.2 and a dopant are ball-milled to form a first powder which is thermo-mechanically processed with a second powder of n-type skutterudite to form a n-type skutterudite layer disposed between a first layer and a third layer of the doped-CoSi.sub.2. In addition, a plurality of components such as iron, and nickel, and at least one of cobalt or chromium are ball-milled form a first powder that is thermo-mechanically processed with a p-type skutterudite layer to form a p-type skutterudite layer "second layer" disposed between a first and a third layer of the first powder. The specific contact resistance between the first layer and the skutterudite layer for both the n-type and the p-type skutterudites subsequent to hot-pressing is less than about 10.0 .mu..OMEGA.cm.sup.2.
Jie, Qing (Houston, TX), Ren, Zhifeng (Houston, TX), Chen, Gang (Cambridge, MA)
University of Houston System (Houston TX), Massachusetts Institute of Technology (Cambridge MA)
14/ 873,503
October 2, 2015
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT [0002] This work is supported by the U.S. Department of Energy under award number DE-EE0005806.