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Low bandgap, monolithic, multi-bandgap, optoelectronic devices

United States Patent Application

20060162768
A1
View the Complete Application at the US Patent & Trademark Office
National Renewable Energy Laboratory - Visit the NREL Technology Transfer Website
Low-bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.
Wanlass, Mark W. (Golden, CO), Carapella, Jeffrey J. (Evergreen, CO)
10/ 515,243
May 21, 2002
CONTRACTUAL ORIGIN OF INVENTION [0001] The United States Government has rights in this invention under Contract No. DE-AC36-99GO10337 between the United States D Renewable Energy Laboratory, a Division of the Midwest Research Institute.