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Back-contacted solar cells with integral conductive vias and method of making

United States Patent Application

20060162766
A1
View the Complete Application at the US Patent & Trademark Office
Sandia National Laboratories - Visit the Intellectual Property Management and Licensing Website
Methods of manufacturing back-contacted p-type semiconductor substrate solar cells fabricated using a gradient-driven solute transport process, such as thermomigration or electromigration, to create n-type conductive vias connecting the n-type emitter layer on the front side to n-type ohmic contacts located on the back side, and back-contacted solar cells with integral n-type conductive vias, such as made by a gradient-driven solute transport process.
Gee, James M. (Albuquerque, NM), Schmit, Russell R. (Sandia Park, NM)
Advent Solar, Inc. (Albuquerque NM)
11/ 319,868
December 27, 2005
FEDERALLY SPONSORED RESEARCH [0002] The United States Government has rights in this invention pursuant to Department of Energy Contract No. DE-AC04-94AL85000 with Sandia Corporation.