This invention is in the field of physical chemistry and relates to novel hyperuniform and nearly hyperuniform random network materials and methods of making said materials. Methods are described for controlling or altering the band gap of a material, and in particular commercially useful materials such as amorphous silicon. These methods can be exploited in the design of semiconductors, transistors, diodes, solar cells and the like.
STATEMENT OF GOVERNMENTAL SUPPORT
 This invention was made with government support awarded by the United States Department of Energy Office of Basic Energy Sciences, Division of Materials Sciences and Engineering under Award DE-FG02-04-ER46108. The government has certain rights in the invention.