Skip to Content
Find More Like This
Return to Search

SYNTHESIS OF SILICON CONTAINING MATERIALS USING LIQUID HYDROSILANE COMPOSITIONS THROUGH DIRECT INJECTION

United States Patent Application

20160068954
A1
View the Complete Application at the US Patent & Trademark Office
An apparatus and a non-vapor-pressure dependent method of chemical vapor deposition of Si based materials using direct injection of liquid hydrosilane(s) are presented. Liquid silane precursor solutions may also include metal, non-metal or metalloid dopants, nanomaterials and solvents. An illustrative apparatus has a precursor solution and carrier gas system, atomizer and deposit head with interior chamber and a hot plate supporting the substrate. Atomized liquid silane precursor solutions and carrier gas moves through a confined reaction zone that may be heated and the aerosol and vapor are deposited on a substrate to form a thin film. The substrate may be heated prior to deposition. The deposited film may be processed further with thermal or laser processing.
Srinivasan, Guruvenket (Fargo, ND), Sailer, Robert A. (West Fargo, ND), Hoey, Justin (Fargo, ND)
NDSU RESEARCH FOUNDATION (Fargo ND)
14/ 853,462
September 14, 2015
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT [0003] This invention was made with Government support under DE-FG36-08G088160 awarded by the United States Department of Energy. The Government has certain rights in the invention.