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HETEROGENEOUS MATERIAL INTEGRATION THROUGH GUIDED LATERAL GROWTH

United States Patent Application

20160017515
A1
View the Complete Application at the US Patent & Trademark Office
Methods are provided for generating a crystalline material. The methods comprise depositing a textured thin film in a growth seed area, wherein the textured thin film has a preferential crystallographic axis; providing a growth channel extending from the growth seed area, the growth channel permitting guided lateral growth; and growing a crystalline material in the growth channel along a direction that is substantially perpendicular to the preferential crystallographic axis of the textured thin film. A preferred crystalline material is gallium nitride, and preferred textured thin films are aluminum nitride and titanium nitride.
Han, Jung (Woodbridge, CT)
Yale University (New Haven CT)
14/ 379,088
February 19, 2013
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT [0002] This invention was made with government support under DE-SC0001134 awarded by Department of Energy. The government has certain rights in the invention.