Nanocrystal thin film devices and methods for fabricating nanocrystal thin film devices are disclosed. The nanocrystal thin films are diffused with a dopant such as Indium, Potassium, Tin, etc. to reduce surface states. The thin film devices may be exposed to air during a portion of the fabrication. This enables fabrication of nanocrystal-based devices using a wider range of techniques such as photolithography and photolithographic patterning in an air environment.
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH
 Aspects of this invention were made with government support under one or more of: National Science Foundation MRSEC Program under Award Number DMR-1120901, National Science Foundation CBET Program under Award CBET-0854226, and the U.S. Department of Energy Office of Basic Energy Sciences, Division of Materials Science and Engineering, under Award No. DE-SC0002158. The government has rights in this invention.