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Wide bandgap semiconductor layers on SOD structures

United States Patent Application

20060113545
A1
View the Complete Application at the US Patent & Trademark Office
Lawrence Berkeley National Laboratory - Visit the Technology Transfer and Intellectual Property Management Department Website
Multi-layered structures containing GaN on SOD (silicon/diamond/silicon) substrates are described. The unique substrate/epilayer combination can provide electronic materials suitable for high-power and opto-electronic devices without commonly observed limitations due to excess heat during device operation. The resulting devices have built-in thermal heat spreading capability that result in better performance and higher reliability.
Weber, Eicke R. (Piedmont, CA), Zimmer, Jerry W. (Saratoga, CA)
11/ 250,728
October 14, 2005
STATEMENT OF GOVERNMENTAL SUPPORT [0002] The invention described and claimed herein was made in part utilizing funds supplied by the U.S. Department of Energy under Contract No. DE-AC03-76SF00098, and more recently under DE-AC02-05CH11231. The government has certain rights in this invention.