A method for lithographic patterning of an insulating or semiconducting solid state material in crystalline form, said method comprising a step where said material is exposed to an amount of radiation which is sufficient to change its insulating or semiconducting state into a conducting state.
STATEMENT OF GOVERNMENT SUPPORT
 This invention was made with government support under Contract No. DE-AC02-05CH11231 awarded by the U.S. Department of Energy. The government has certain rights in this invention.