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Lithographic patterning of insulating or semiconducting solid state material in crystalline form

United States Patent Application

20150323864
A1
View the Complete Application at the US Patent & Trademark Office
Lawrence Berkeley National Laboratory - Visit the Technology Transfer and Intellectual Property Management Department Website
A method for lithographic patterning of an insulating or semiconducting solid state material in crystalline form, said method comprising a step where said material is exposed to an amount of radiation which is sufficient to change its insulating or semiconducting state into a conducting state.
Moser, Simon Karl (Lausanne, CH), Moreschini, Luca (Berkeley, CA), Rotenberg, Eli (Oakland, CA)
14/ 713,154
May 15, 2015
STATEMENT OF GOVERNMENT SUPPORT [0002] This invention was made with government support under Contract No. DE-AC02-05CH11231 awarded by the U.S. Department of Energy. The government has certain rights in this invention.