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GROWING CRYSTALLINE SEMICONDUCTOR OXIDE THIN FILMS ON A SUBSTRATE AT A LOW TEMPERATURE USING MICROWAVE RADIATION

United States Patent Application

20150325439
A1
View the Complete Application at the US Patent & Trademark Office
A method for growing crystalline semiconductor oxide thin films. A substrate is coated with a conducting oxide (e.g., indium tin oxide). The coated substrate is immersed in a growth solution, such as a solution of a titanium-based sol-gel precursor combined with tetraethylene glycol. The coated substrate and the growth solution are heated in a microwave reactor via microwave radiation. Film growth of crystalline semiconductor oxide thin films (e.g., titanium dioxide thin films) are then catalyzed by microwave interaction with the conducting oxide on the substrate. Such a process enables crystalline semiconductor oxide thin films to be grown on a flexible or heat-sensitive substrate (e.g., plastic) using a low temperature in a fast and inexpensive manner.
MANTHIRAM, Arumugam (Austin, TX), JAYAN, Baby Reeja (Austin, TX), HARRISON, Katharine L. (Austin, TX)
14/ 651,725
August 14, 2013
GOVERNMENT INTERESTS [0002] The U.S. Government has certain rights in this invention pursuant to the terms of the Department of Energy Grant Nos. DE-SC0005397 and DE-SC0001091.