The present disclosure includes devices for detecting photons, including avalanche photon detectors, arrays of such detectors, and circuits including such arrays. In some aspects, the detectors and arrays include a virtual beveled edge mesa structure surrounded by resistive material damaged by ion implantation and having side wall profiles that taper inwardly towards the top of the mesa structures, or towards the direction from which the ion implantation occurred. Other aspects are directed to masking and multiple implantation and/or annealing steps. Furthermore, methods for fabricating and using such devices, circuits and arrays are disclosed.
 Aspects of the present benefited from US Government support under SBIR Phase I, Grant No. DE-SC0009538 awarded by the Department of Energy. The US Government may have certain rights in the invention(s) pursuant to 35 USC Section 202(c)(6), as applicable.