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Nitride Semiconductor Crystal Manufacturing Method, Nitride Semiconductor Crystal, and Nitride Semiconductor Crystal Manufacturing Apparatus

United States Patent Application

20110265709
A1
View the Complete Application at the US Patent & Trademark Office
Microsystems Enabled Photovoltaics (MEPV)
Nitride semiconductor crystal manufacturing method according to which the following steps are carried out. To begin with, a crucible (101) for interiorly carrying source material (17) is prepared. Within the crucible (101), heating of the source material (17) sublimes the source material, and by the condensing of source-material gases caused, nitride semiconductor crystal is grown. In the preparation step, a crucible (101) made from a metal whose melting point is higher than that of the source material (17) is prepared.
Satoh, Issei (Itami-shi, JP), Miyanaga, Michimasa (Osaka-shi, JP), Yamamoto, Yoshiyuki (Itami-shi, JP)
SUMITOMO ELECTRIC INDUSTRIES, LTD. (Osaka-shi JP)
13/ 063,937
January 13, 2010