A method for sublimating a thin film of Magnesium (Mg) on a semiconductor structure for improved efficiency is described. One embodiment includes a method comprised of providing a semiconductor substrate in a vacuum chamber, wherein the substrate comprises a window layer and an absorber layer made of CdTe. The method further includes heating the substrate to a diffusion temperature or greater followed by depositing a Mg film on the absorber layer using a sublimation process, wherein at least a portion of the Mg forms a Cd.sub.1-xMg.sub.xTe alloy within the absorber layer.
GOVERNMENT LICENSE RIGHTS
 This invention was made with government support under Grant No. IIP0968987 awarded by the National Science Foundation. The government has certain rights in the invention.