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THIN FILM VLS SEMICONDUCTOR GROWTH PROCESS

United States Patent Application

20140290737
A1
View the Complete Application at the US Patent & Trademark Office
Lawrence Berkeley National Laboratory - Visit the Technology Transfer and Intellectual Property Management Department Website
A composition comprising a substrate, a polycrystalline III-V semiconductor layer, and an oxide layer disposed above the polycrystalline III-V semiconductor layer is described. A growth method that enables fabrication of continuous thin films of polycrystalline indium phosphide (InP) directly on metal foils is described. The method describes the deposition of an indium (In) thin film (up to 20 microns thick) directly on molybedenum (Mo) foil, followed by the deposition of a thin oxide capping layer (up to 1 micron thick). This capping layer prevents dewetting of the In from the substrate during subsequent high temperature processing steps. The Mo/In/Capping Layer stack is then heated in the presence of phosphorous precursors, causing supersaturation of the liquid indium with phosphorous, followed by precipitation of InP. These polycrystalline III-V films have grain sizes 100-200 microns, minority carrier lifetimes >2 ns and hall mobilities of 500 cm 2/V-s.
Javey, Ali (Lafayette, CA), Yu, Zhibin (Berkeley, CA), Kapadia, Rehan (Berkeley, CA)
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA (Oakland CA)
14/ 243,586
April 2, 2014
STATEMENT OF GOVERNMENTAL SUPPORT [0002] The invention described and claimed herein was made in part utilizing funds supplied by the U.S. Department of Energy under Contract No. DE-AC02-05CH11231 between the U.S. Department of Energy and the Regents of the University of California for the management and operation of the Lawrence Berkeley National Laboratory. The government has certain rights in this invention.