Skip to Content
Return to Search

GROWTH OF LARGE ALUMINUM NITRIDE SINGLE CRYSTALS WITH THERMAL-GRADIENT CONTROL

United States Patent Application

*** PATENT GRANTED ***
20150218728
9,580,833
A1
View the Complete Application at the US Patent & Trademark Office
In various embodiments, non-zero thermal gradients are formed within a growth chamber both substantially parallel and substantially perpendicular to the growth direction during formation of semiconductor crystals, where the ratio of the two thermal gradients (parallel to perpendicular) is less than 10, by, e.g., arrangement of thermal shields outside of the growth chamber.
Bondokov, Robert T. (Watervliet, NY), Rao, Shailaja P. (Albany, NY), Gibb, Shawn R. (Clifton Park, NY), Schowalter, Leo J. (Latham, NY)
14/ 686,812
April 15, 2015
GOVERNMENT SUPPORT [0002] This invention was made with United States Government support under contract number DE-FC26-08-NT01578 awarded by the Department of Energy (DOE). The United States Government has certain rights in the invention.