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REMOTE DOPING OF ORGANIC THIN FILM TRANSISTORS

United States Patent Application

20140231765
A1
View the Complete Application at the US Patent & Trademark Office
Organic electronic devices comprising "remotely" doped materials comprising a combination of at least three layers. Such devices can include "remotely p-doped" structures comprising: a channel layer comprising at least one organic semiconductor channel material; a dopant layer, which comprises at least one p-dopant material and optionally at least one organic hole transport material; and a spacer layer disposed between and in electrical contact with both the channel layer and the dopant layer, comprising an organic semiconducting spacer material; or alternatively can include "remotely n-doped" structures comprising a combination of at least three layers: a channel layer comprising at least one organic semiconductor channel material; a dopant layer which comprises at least one organic electron transport material doped with an n-dopant material; and a spacer layer disposed between and in electrical contact with the channel layer and the dopant layer, comprising an organic semiconducting spacer material. Such devices include "remotely doped" field effect transistors comprising the doped structures described above.
ZHAO, Wei (Gainesville, FL), QI, Yabing (Plainsboro, NJ), KAHN, Antoine (Princeton, NJ), MARDER, Seth R. (Atlanta, GA), BARLOW, Stephen (Atlanta, GA)
The Trustees of Princeton University (Princeton NJ), Georgia Tech Research Corporation (Atlanta GA)
14/ 092,523
November 27, 2013
STATEMENT OF GOVERNMENT LICENSE RIGHTS [0002] The Princeton inventors received partial funding support through the National Science Foundation under Grant Number DMR-0705920 and the Princeton MRSEC of the National Science Foundation under Grant number DMR-0819860. The Georgia Tech inventors received partial funding support through the National Science Foundation under Grant Number DMR-0805259 and the Department of Energy, Basic Energy Sciences under Grant number DE-FG02-07ER46467. The Federal Government has certain license rights in this invention.