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OPTOELECTRONIC DEVICES AND METHODS OF FABRICATING SAME

United States Patent Application

20140329050
A1
View the Complete Application at the US Patent & Trademark Office
A hybrid graphene-silicon optical cavity for chip-scale optoelectronics having attributes including resonant optical bistability for photonic logic gates and memories at femtojoule level switching per bit, temporal regenerative oscillations for self-pulsation generation at record femtojoule cavity circulating powers, and graphene-cavity enhanced four-wave mixing at femtojoule energies on the chip.
Gu, Tingyi (Hangzhou, CN), Wong, Chee Wei (Singapore, SG)
14/ 334,431
July 17, 2014
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH [0002] This invention was made with government support under grant number DGE1069240 awarded by the National Science Foundation and grant number DE-SC0001085 awarded by the U.S. Department of Energy. The government has certain rights in the invention.