A high pressure-directed engineering method enables reduced defect semiconductor materials that are unattainable by other chemical and physical methods. Experimental results show that hydraulic pressures as low as 0.5 GPa can eliminate stacking faults and significantly reduce point defects, leading to improved materials quality in semiconductors, such as GaN.
STATEMENT OF GOVERNMENT INTEREST
 This invention was made with Government support under contract no. DE-AC04-94AL85000 awarded by the U.S. Department of Energy to Sandia Corporation. The Government has certain rights in the invention.