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NOVEL GROWTH METHODS FOR CONTROLLED LARGE-AREA FABRICATION OF HIGH-QUALITY GRAPHENE ANALOGS

United States Patent Application

20140251204
A1
View the Complete Application at the US Patent & Trademark Office
In some embodiments, the present disclosure pertains to methods of growing chalcogen-linked metallic films on a surface in a chamber. In some embodiments, the method comprises placing a metal source and a chalcogen source in the chamber, and gradually heating the chamber, where the heating leads to the chemical vapor deposition of the chalcogen source and the metal source onto the surface, and facilitates the growth of the chalcogen-linked metallic film from the chalcogen source and the metal source on the surface. In some embodiments, the chalcogen source comprises sulfur, and the metal source comprises molybdenum trioxide. In some embodiments, the growth of the chalcogen-linked metallic film occurs by formation of nucleation sites on the surface, where the nucleation sites merge to form the chalcogen-linked metallic film. In some embodiments, the formed chalcogen-linked metallic film includes MoS.sub.2.
Najmaei, Sina (Houston, TX), Liu, Zheng (Singapore, SG), Ajayan, Pulickel M. (Houston, TX), Lou, Jun (Houston, TX)
William Marsh Rice University (Houston TX)
14/ 203,958
March 11, 2014
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH [0002] This invention was made with government support under Grant No. ECCS 0702766, awarded by the National Science Foundation; Grant No. FA8650-07-2-5061, awarded by the U.S. Department of Defense; Grant No. W911NF-11-1-0362, awarded by the U.S. Department of Defense; Grant No. CMMI-0928297, awarded by the National Science Foundation; Grant No. N00014-09-1-1066, awarded by the U.S. Department of Defense; Grant No. DE-FG02-09ER46554, awarded by the U.S. Department of Energy; Grant No. DMR-0820404, awarded by the National Science Foundation; Grant No. DMR-0938330, awarded by the National Science Foundation; Grant No. CNS-0821727, awarded by the National Science Foundation; and Grant No. OCI-0959097, awarded by the National Science Foundation. The government has certain rights in the invention.