Systems and methods for high and ultra-high vacuum physical vapor deposition with in-situ magnetic field are disclosed herein. An exemplary method for depositing a film in an evacuated vacuum chamber can include introducing a sample into the vacuum chamber. The sample can be rotated. A magnetic field can be applied that rotates synchronously with the rotating sample. Atoms can be deposited onto the sample while the sample is rotating with the magnetic field to deposit a film while the magnetic field induces magnetic anisotropy in the film.
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH
 This invention is made with government support from the U.S. Department of Energy under Grant No. DE-EE0002892 and the National Science Foundation under Grant No. ECCS0925829. The Government has certain rights in the invention.