Apparatus and methods to incorporate p-type dopants in II-VI semiconducting layers are disclosed herein. In some embodiments, radical nitrogen is introduced in a physical vapor deposition apparatus operating at moderate pressures (e.g. 10.sup.-5 Torr to 100 Torr). The radical nitrogen allows for in-situ doping of II-VI materials, such as ZnTe, to degenerate levels.
STATEMENT OF GOVERNMENT SUPPORT
 This invention is made with Government support under contract number DE-EE0005332 awarded by the Department of Energy. The Government has certain rights to this invention.