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P-TYPE DOPING OF II-VI MATERIALS WITH RAPID VAPOR DEPOSITION USING RADICAL NITROGEN

United States Patent Application

20150053259
A1
View the Complete Application at the US Patent & Trademark Office
Apparatus and methods to incorporate p-type dopants in II-VI semiconducting layers are disclosed herein. In some embodiments, radical nitrogen is introduced in a physical vapor deposition apparatus operating at moderate pressures (e.g. 10.sup.-5 Torr to 100 Torr). The radical nitrogen allows for in-situ doping of II-VI materials, such as ZnTe, to degenerate levels.
Hardin, Brian E. (Berkeley, CA), Groves, James Randy (Sunnyvale, CA), Connor, Stephen T. (San Francisco, CA), Peters, Craig H. (Oakland, CA)
PLANT PV (Oakland CA)
14/ 466,118
August 22, 2014
STATEMENT OF GOVERNMENT SUPPORT [0002] This invention is made with Government support under contract number DE-EE0005332 awarded by the Department of Energy. The Government has certain rights to this invention.