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BACK CONTACT TO FILM SILICON ON METAL FOR PHOTOVOLTAIC CELLS

United States Patent Application

20140141563
A1
View the Complete Application at the US Patent & Trademark Office
National Renewable Energy Laboratory - Visit the NREL Technology Transfer Website
Systems and Methods for back contact to film silicon on metal for photovoltaic cells are provided. In one embodiment, a method for creating a conductive pathway in a photovoltaic cell comprises: obtaining a layered photovoltaic device comprising: a metal substrate with a crystal orientation; a crystal semiconductor layer with the crystal orientation; and a heteroepitaxially grown buffer layer positioned between the substrate and the crystal semiconductor layer; and forming one or more conductive pathways between the crystal semiconductor layer and the metal substrate, the pathways being through at least a portion of the buffer layer.
Branz, Howard M. (Golden, CO), Teplin, Charles W. (Golden, CO), Stradins, Pauls (Golden, CO)
ALLIANCE FOR SUSTAINABLE ENERGY, LLC (Golden CO)
14/ 173,324
February 5, 2014
GOVERNMENT LICENSE RIGHTS [0002] The United States Government has rights in this invention under Contract No. DE-AC36-08GO28308 between the United States Department of Energy and the National Renewable Energy Laboratory, managed and operated by the Alliance for Sustainable Energy, LLC.