Methods of controlling island size and density on an OMVPE growth film may comprise adding a surfactant at a critical concentration level, allowing a growth phase for a first period of time, and ending the growth phase when desired island size and density are achieved. For example, the island size and density of an OMVPE grown InGaN thin film may be controlled by adding an antimony surfactant at a critical concentration level.
REFERENCE TO GOVERNMENT RIGHTS
 This invention was made with government support under grant number US DOE-BES (DE-FG0204ER46148) awarded by the U.S. Department of Energy. The government may have certain rights in this invention.