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USE OF SURFACTANTS TO CONTROL ISLAND SIZE AND DENSITY

United States Patent Application

*** PATENT GRANTED ***
20140130731
9,735,008
A1
View the Complete Application at the US Patent & Trademark Office
Methods of controlling island size and density on an OMVPE growth film may comprise adding a surfactant at a critical concentration level, allowing a growth phase for a first period of time, and ending the growth phase when desired island size and density are achieved. For example, the island size and density of an OMVPE grown InGaN thin film may be controlled by adding an antimony surfactant at a critical concentration level.
Merrell, Jason (Draper, UT), Liu, Feng (Salt Lake City, UT), Stringfellow, Gerald B. (Salt Lake City, UT)
The University of Utah (Salt Lake City UT)
14/ 063,143
October 25, 2013
REFERENCE TO GOVERNMENT RIGHTS [0002] This invention was made with government support under grant number US DOE-BES (DE-FG0204ER46148) awarded by the U.S. Department of Energy. The government may have certain rights in this invention.