Skip to Content
Find More Like This
Return to Search

METHOD FOR ACHIEVING SUSTAINED ANISOTROPIC CRYSTAL GROWTH ON THE SURFACE OF A MELT

United States Patent Application

20150040818
A1
View the Complete Application at the US Patent & Trademark Office
A method of horizontal ribbon growth from a melt of material includes forming a leading edge of the ribbon using radiative cooling, drawing the ribbon in a first direction along a surface of the melt, removing heat radiated from the melt in a region adjacent the leading edge of the ribbon by setting a temperature T.sub.c of a cold plate proximate a surface of the melt at a value that is greater than 50.degree. C. below a melting temperature T.sub.m of the material, setting a temperature at a bottom of the melt at a value that is between 1.degree. C. and 3.degree. C. greater than the T.sub.m, and providing the heat flow through the melt at a heat flow rate that is above that of an instability regime characterized by segregation of solutes during crystallization of the melt, and is below a heat flow rate for stable isotropic crystal growth.
Kellerman, Peter L. (Essex, MA), Sun, Dawei (Nashua, NH), Mackintosh, Brian H. (Concord, MA)
14/ 526,008
October 28, 2014
STATEMENT AS TO FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT [0001] The U.S. Government has a paid-up license in this invention and the right in limited circumstances to require the patent owner to license others on reasonable terms as provided for by the terms of contract number DE-EE0000595 awarded by the U.S. Department of Energy.