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HIGH EFFICIENCY SILICON-COMPATIBLE PHOTODETECTORS BASED ON GE QUANTUM DOTS AND GE/SI HETERO-NANOWIRES

United States Patent Application

20140182668
A1
View the Complete Application at the US Patent & Trademark Office
The present disclosure focuses on Ge nanostructured materials for optoelectronic devices: including high-efficiency quantum dot (QD) photodetectors and Si and Ge heteronanowire solar cells. The common thread among these materials is the use of Ge/Si or Ge/oxide barriers to confine carriers and enhance photoconductive gain in detectors and optical absorption and spectral coverage in solar cells.
PACIFICI, Domenico (Providence, RI), ZASLAVSKY, Alexander (Providence, RI), LE, Son T. (Providence, RI)
BROWN UNIVERSITY (Providence RI)
14/ 093,938
December 2, 2013
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT [0002] This invention was made with support from Grant No. DMR-0520651 from the National Science Foundation, Grant No. DMR-0804915 from the National Science Foundation, and Grant U.S. DESC0001556 from the Department of Energy. The United States Government has certain rights in the invention.