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STRAIN TUNABLE LIGHT EMITTING DIODES WITH GERMANIUM P-I-N HETEROJUNCTIONS

United States Patent Application

*** PATENT GRANTED ***
20150129911
9,472,535
A1
View the Complete Application at the US Patent & Trademark Office
Tunable p-i-n diodes comprising Ge heterojunction structures are provided. Also provided are methods for making and using the tunable p-i-n diodes. Tunability is provided by adjusting the tensile strain in the p-i-n heterojunction structure, which enables the diodes to emit radiation over a range of wavelengths.
Lagally, Max G. (Madison, WI), Sanchez Perez, Jose Roberto (Madison, WI)
Wisconsin Alumni Research Foundation (Madison WI)
14/ 074,955
November 8, 2013
REFERENCE TO GOVERNMENT RIGHTS [0001] This invention was made with government support under DE-FG02-03ER46028 awarded by the Department of Energy. The government has certain rights in the invention.