The uninterrupted production of an ion beam with self-cleaning of a discharge chamber and extractor system, including extraction aperture(s), of an ion implantation device. The method increases the time of continuous operation of the ion implantation device, and therefore, increases total implantation time without reducing intensity. As a result, the time integrated output of the ion implantation device is increased. The method includes feeding a working molecule comprising at least two boron atoms and a strong oxidizer into an ion implantation device and removing gaseous compounds from the ion implantation device, wherein said working molecule provides upon fragmentation a polyatomic boron-containing ion, and the strong oxidizer which reacts with solid products of decomposition of the working molecule to form said gaseous compounds. A working molecule including at least two boron atoms and at least one strong oxidizer is also disclosed. Examples of the working molecule include C.sub.4H.sub.12B.sub.10O.sub.4, such as 1,7-m-carborane dicarboxylic acid or o-carborane-1,2-dicarboxylic acid.
STATEMENT OF GOVERNMENT LICENSE RIGHTS
 This invention was made with Government support under contract number DE-AC02-98CH10886, awarded by the U.S. Department of Energy. The Government has certain rights in the invention.