A p-type semiconductor material with enhanced thermoelectric and electric properties comprising alternating thin films of boron carbide having a dopant selected from the group of Ge and Si. Alternating layers of boron carbide are of the general form B.sub.xC.sub.y with B.sub.4C and B.sub.9C being preferred. Layers are formed by sputter depositing. The dopant is provided in the layers by co-sputtering the dopant with the boron carbide. Alternatively, the dopant may be provided by diffusing the dopant into the deposited boron carbide layers. Layers are formed on a substrate that is heated to a temperature of between about 400.degree. C. and about 600.degree. C. The alternating layers of boron carbide are heat treated at a temperature of about 900.degree. C.-1000.degree. C. for a period of about 1 hour to form a polycrystalline structure.
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT
 This invention was made with Government support under Contract DE-AC0676RLO1830 awarded by the U.S. Department of Energy. The Government has certain rights in the invention.