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Method for Synthesis of Uniform Bi-Layer and Few-Layer Hexagonal Boron Nitride Dielectric Films

United States Patent Application

20150167148
A1
View the Complete Application at the US Patent & Trademark Office
Brookhaven National Laboratory - Visit the Office of Technology Commercialization and Partnerships Website
A method for forming high quality hexagonal boron-nitride films with multiple layers that are substantially parallel to the substrate and with substantially uniform layer thickness. In one embodiment, a bi-layer of boron-nitride is formed on a substrate by reactive radio frequency magnetron sputtering of a boron target in high-purity Ar/N.sub.2 gas mixtures at elevated temperature. In another embodiment, few-layer boron nitride films are formed by alternatingly reactive radio frequency magnetron sputtering of a boron target in high-purity Ar/N.sub.2 gas mixtures at room temperature and annealing at elevated temperature until a desired number of layers of high quality hexagonal boron nitride layers are formed on the substrate.
Sutter, Peter Werner (Westhampton Beach, NY), Sutter, Eli Anguelova (Westhampton Beach, NY)
14/ 572,928
December 17, 2014
STATEMENT OF GOVERNMENT RIGHTS [0002] This invention was made with Government support under contract number DE-AC02-98CH10886, awarded by the U.S. Department of Energy. The United States Government has certain rights in the invention.