A method for forming high quality hexagonal boron-nitride films with multiple layers that are substantially parallel to the substrate and with substantially uniform layer thickness. In one embodiment, a bi-layer of boron-nitride is formed on a substrate by reactive radio frequency magnetron sputtering of a boron target in high-purity Ar/N.sub.2 gas mixtures at elevated temperature. In another embodiment, few-layer boron nitride films are formed by alternatingly reactive radio frequency magnetron sputtering of a boron target in high-purity Ar/N.sub.2 gas mixtures at room temperature and annealing at elevated temperature until a desired number of layers of high quality hexagonal boron nitride layers are formed on the substrate.
STATEMENT OF GOVERNMENT RIGHTS
 This invention was made with Government support under contract number DE-AC02-98CH10886, awarded by the U.S. Department of Energy. The United States Government has certain rights in the invention.