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NEAR-INFRARED LIGHT EMITTING DEVICE USING SEMICONDUCTOR NANOCRYSTALS

United States Patent Application

20140158977
A1
View the Complete Application at the US Patent & Trademark Office
A near-infrared light emitting device can include semiconductor nanocrystals that emit at wavelengths beyond 1 .mu.m. The semiconductor nanocrystals can include a core and an overcoating on a surface of the core.
SUPRAN, Geoffrey J.S. (Cambridge, MA), SONG, Katherine W. (Cambridge, MA), HWANG, Gyuweon (Cambridge, MA), CORREA, Raoul Emile (West Hartford, CT), SHIRASAKI, Yasuhiro (Tokyo, JP), BAWENDI, Moungi G. (Cambridge, MA), BULOVIC, Vladimir (Lexington, MA)
MASSACHUSETTS INSTITUTE OF TECHNOLOGY (Cambridge MA)
14/ 101,867
December 10, 2013
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT [0002] This invention was made with government support under Contract No. W911NF-07-D-0004 awarded by the Army Research Office and under Grant No. DE-SC0001088 awarded by the Department of Energy. The government has certain rights in the invention.