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SMART MEMORY BUFFERS

United States Patent Application

20150193158
A1
View the Complete Application at the US Patent & Trademark Office
An example method involves receiving, at a first memory node, data to be written at a memory location in the first memory node. The data is received from a device. At the first memory node, old data is read from the memory location, without sending the old data to the device. The data is written to the memory location. The data and the old data are sent from the first memory node to a second memory node to store parity information in the second memory node without the device determining the parity information. The parity information is based on the data stored in the first memory node.
Yoon, Doe Hyun (Palo Alto, CA), Murali-Manohar, Naveen (Palo Alto, CA), Chang, Jichuan (Palo Alto, CA), Ranganathan, Parthasarathy (Palo Alto, CA)
14/ 417,220
October 30, 2012
STATEMENT OF GOVERNMENT INTEREST [0001] An invention disclosed herein has been made with government support under Contract No. DE-SC0005026, awarded by The Department of Energy. The government has certain rights in the invention.