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Economical and very simple to fabricate single device equivalent to CMOS, and other semiconductor devices in compensated semiconductor

United States Patent Application

20060022293
A1
View the Complete Application at the US Patent & Trademark Office
Semiconductor devices formed in fully or partially compensated semiconductor, substrate or epi-layer , including minimal current flow voltage switching devices with at least one junction which is rectifying when the semiconductor is caused to be N or P-type by the presence of applied gate voltage field induced carriers, such as inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to conventional multiple device CMOS systems.
Welch, James D. (Omaha, NE)
10/ 967,774
October 18, 2004
[0002] The invention in this application was conceived and developed in part under support provided by a grant from the Energy Related Inventions Program of the United States Federal Department of Energy, Contract No. DE-FG47-93R701314. The United States Government has certain rights in this invention.