A method of depositing silicon carbide on a substrate, including placing a substrate in a low pressure chemical vapor deposition chamber; flowing a single source precursor gas containing silicon and carbon into the chamber; maintaining the chamber at a pressure not less than approximately 5 mTorr; and maintaining the substrate temperature less than approximately 900.degree. C. The Method also includes a method for depositing a nitrogen doped silicon carbide by the addition of nitrogen containing gas into the chamber along with flowing a single source precursor gas containing silicon and carbon into the chamber.
STATEMENT AS TO RIGHTS TO INVENTIONS MADE UNDER FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT
 A part of this invention was made with Government support under Grant (Contract) Nos. N660010118967 and NBCHCO10060 awarded by DARPA, and Grant (Contract) No. 9782 awarded by the Department of Energy. The Government has certain rights to this invention.