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Field-Effect P-N Junction

United States Patent Application

20130334501
A1
View the Complete Application at the US Patent & Trademark Office
Lawrence Berkeley National Laboratory - Visit the Technology Transfer and Intellectual Property Management Department Website
Embodiments described herein provide a field-effect p-n junction. In some embodiments, the field-effect p-n junction includes (1) an ohmic contact, (2) a semiconductor layer above the ohmic contact, (3) at least one rectifying contact above the semiconductor layer, where the lateral width of the rectifying contact is less than the semiconductor depletion width of the semiconductor layer, and (4) a gate above the rectifying contact. In some embodiments, the field-effect p-n junction includes (1) an ohmic contact, (2) a semiconductor layer above the ohmic contact, (3) a thin top contact above the semiconductor layer, where the out of plane thickness of the thin top contact is less than the Debye screening length of the thin top contact, and (4) a gate above the thin top contact.
Regan, William (Berkeley, CA), Byrnes, Steven (Belmont, MA), Zettl, Alexander K. (Kensington, CA), Wang, Feng (El Cerrito, CA)
The Regents of the University of California (Oakland CA)
13/ 607,347
September 7, 2012
STATEMENT OF GOVERNMENT SUPPORT [0002] This invention was made with government support under Contract No. DE-AC02-05CH11231 awarded by the U.S. Department of Energy. The government has certain rights in this invention.