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THREE DIMENSIONAL STRAINED SEMICONDUCTORS

United States Patent Application

*** PATENT GRANTED ***
20130334541
9,490,318
A1
View the Complete Application at the US Patent & Trademark Office
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In one embodiment, an apparatus includes a three dimensional structure comprising a semiconductor material, and at least one thin film in contact with at least one exterior surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the three dimensional structure. In another embodiment, a method includes forming a three dimensional structure comprising a semiconductor material, and depositing at least one thin film on at least one surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the structure.
Voss, Lars (Livermore, CA), Conway, Adam (Livermore, CA), Nikolic, Rebecca J. (Oakland, CA), Leao, Cedric Rocha (Oakland, CA), Shao, Qinghui (Fremont, CA)
13/ 912,885
June 7, 2013
[0002] The United States Government has rights in this invention pursuant to Contract No. DE-AC52-07NA27344 between the United States Department of Energy and Lawrence Livermore National Security, LLC for the operation of Lawrence Livermore National Laboratory.