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INTEGRATED CIRCUIT AND METHOD OF FABRICATING SAME

United States Patent Application

20130334612
A1
View the Complete Application at the US Patent & Trademark Office
An integrated circuit includes a plurality of transistors. Each transistor is associated with a corresponding body terminal. At least one transistor is reverse biased at a first voltage level, and at least one other transistor is reverse biased at a second voltage level that is different from the first voltage level. Each body terminal is electrically isolated from every other body terminal via an isolation barrier. A transistor that is reverse biased at the first voltage level is electrically connected to a transistor that is reverse biased at the second voltage level, such that the electrically connected transistors operate to interact with each other while the respective body voltage levels are different from each other and are changing independently of each other during operation of the integrated circuit.
Chen, Cheng-Po (NISKAYUNA, NY), Andarawis, Emad Andarawis (BALLSTON LAKE, NY), Tilak, Vinayak (NISKAYUNA, NY), Stum, Zachary Matthew (NISKAYUNA, NY)
GENERAL ELECTRIC COMPANY (SCHENECTADY NY)
13/ 965,437
August 13, 2013
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH & DEVELOPMENT [0002] The invention described herein was made with Government support under Contract No. DE-FG36-08GO18181 awarded by the Department of Energy. The Government has certain rights in the invention.